Invention Grant
- Patent Title: Charge trapping type semiconductor memory device and method of manufacturing the same
- Patent Title (中): 电荷俘获型半导体存储器件及其制造方法
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Application No.: US11594912Application Date: 2006-11-09
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Publication No.: US07645668B2Publication Date: 2010-01-12
- Inventor: Chang-Seob Kim , Jeong-Lim Nam , Won-Jin Kim , Guk-Hyon Yon
- Applicant: Chang-Seob Kim , Jeong-Lim Nam , Won-Jin Kim , Guk-Hyon Yon
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2006-0090282 20060918
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A memory device includes a charge trapping layer on a substrate, an insulating layer on the substrate adjacent to the charge trapping layer and exposing an upper surface of the charge trapping layer, a dielectric layer on the exposed charge trapping layer and on the insulating layer, and an electrode on the dielectric layer, the electrode corresponding to the charge trapping layer.
Public/Granted literature
- US20080067571A1 Semiconductor memory device and method of manufacturing the same Public/Granted day:2008-03-20
Information query
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