Invention Grant
- Patent Title: Method of growing non-polar m-plane nitride semiconductor
- Patent Title (中): 生长非极性m面氮化物半导体的方法
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Application No.: US11790329Application Date: 2007-04-25
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Publication No.: US07645688B2Publication Date: 2010-01-12
- Inventor: Soo Min Lee , Masayoshi Koike , Sung Hwan Jang , Hyo Won Suh
- Applicant: Soo Min Lee , Masayoshi Koike , Sung Hwan Jang , Hyo Won Suh
- Applicant Address: KR Gyunggi-do
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Gyunggi-do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2006-0037327 20060425
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36
Abstract:
A method of growing a non-polar m-plane nitride semiconductor. A (11-23) plane sapphire substrate is prepared, and a non-polar (10-10) nitride semiconductor is grown on the sapphire substrate. The present invention can also be applied to a method for manufacturing other m-plane hexagonal semiconductors.
Public/Granted literature
- US20070254459A1 Method of growing non-polar m-plane nitride semiconductor Public/Granted day:2007-11-01
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