发明授权
- 专利标题： Dry etchback of interconnect contacts
- 专利标题（中）： 互连触点的干蚀刻
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申请号： US11946922申请日： 2007-11-29
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公开(公告)号： US07645700B2公开(公告)日： 2010-01-12
- 发明人: Theodorus E Standaert , William H Brearley , Stephen E Greco , Sujatha Sankaran
- 申请人： Theodorus E Standaert , William H Brearley , Stephen E Greco , Sujatha Sankaran
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Joseph Petrokaitis
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A method and structure for a composite stud contact interface with a decreased contact resistance and improved reliability. A selective dry etch is used which comprises a fluorine containing gas. The contact resistance is reduced by partially dry-etching back the tungsten contact after or during the M1 RIE process. The recessed contact is then subsequently metalized during the M1 liner/plating process. The tungsten contact height is reduced after it has been fully formed.
公开/授权文献
- US20080088027A1 DRY ETCHBACK OF INTERCONNECT CONTACTS 公开/授权日：2008-04-17
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