发明授权
- 专利标题: Method of fabricating a low frequency quartz resonator
- 专利标题(中): 制造低频石英谐振器的方法
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申请号: US12189617申请日: 2008-08-11
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公开(公告)号: US07647688B1公开(公告)日: 2010-01-19
- 发明人: David T. Chang , Randall L. Kubena , Frederic P. Stratton , Pamela R. Patterson
- 申请人: David T. Chang , Randall L. Kubena , Frederic P. Stratton , Pamela R. Patterson
- 申请人地址: US CA Malibu
- 专利权人: HRL Laboratories, LLC
- 当前专利权人: HRL Laboratories, LLC
- 当前专利权人地址: US CA Malibu
- 代理机构: Ladas & Parry
- 主分类号: H04R31/00
- IPC分类号: H04R31/00
摘要:
A method for fabricating a low frequency quartz resonator includes metalizing a top-side of a quartz wafer with a metal etch stop, depositing a first metal layer over the metal etch stop, patterning the first metal layer to form a top electrode, bonding the quartz wafer to a silicon handle, thinning the quartz wafer to a desired thickness, depositing on a bottom-side of the quartz wafer a hard etch mask, etching the quartz wafer to form a quartz area for the resonator and to form a via through the quartz wafer, removing the hard etch mask without removing the metal etch stop, forming on the bottom side of the quartz wafer a bottom electrode for the low frequency quartz resonator, depositing metal for a substrate bond pad onto a host substrate wafer, bonding the quartz resonator to the substrate bond pad, and removing the silicon handle.