Invention Grant
US07648804B2 Mask and fabrication method thereof and application thereof 有权
掩模及其制造方法及其应用

  • Patent Title: Mask and fabrication method thereof and application thereof
  • Patent Title (中): 掩模及其制造方法及其应用
  • Application No.: US11413735
    Application Date: 2006-04-28
  • Publication No.: US07648804B2
    Publication Date: 2010-01-19
  • Inventor: Chun-Hao Tung
  • Applicant: Chun-Hao Tung
  • Applicant Address: TW Hsinchu
  • Assignee: Au Optronics Corp.
  • Current Assignee: Au Optronics Corp.
  • Current Assignee Address: TW Hsinchu
  • Agency: J.C. Patents
  • Priority: TW94147541A 20051230
  • Main IPC: G03F1/00
  • IPC: G03F1/00
Mask and fabrication method thereof and application thereof
Abstract:
A mask including a transparent substrate, a semi-transparent layer and a film layer is provided. The transparent substrate at least has a first region, a second region and a third region. The semi-transparent layer covers the second region and the third region of the transparent substrate and exposes the first region. The film layer covers the halftone layer disposed at the third region, to make the transmittance of the third region lower than that of the second region. The halftone layer and the film can be made of phase shift layers, to form a phase shift mask. Besides, several fabrication methods of the mask are also disclosed to form the above-mentioned mask.
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