发明授权
- 专利标题: Nonvolatile ferroelectric memory
- 专利标题(中): 非易失性铁电存储器
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申请号: US11689725申请日: 2007-03-22
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公开(公告)号: US07649763B2公开(公告)日: 2010-01-19
- 发明人: Daisaburo Takashima
- 申请人: Daisaburo Takashima
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2006-105739 20060406
- 主分类号: G11C11/22
- IPC分类号: G11C11/22
摘要:
According to an aspect of the invention, there is provided a nonvolatile ferroelectric memory, including a ferroelectric capacitor composed of a ferroelectric film sandwiched by capacitor electrodes made of a conductive material, a cell capacitor block stacked a plurality of the capacitor electrodes and the ferroelectric film of the ferroelectric capacitor perpendicular to a main surface of a silicon substrate in layer, a cell transistor having a drain electrode and a source electrode, the drain electrode and the source electrode are electrically connected to the ferroelectric capacitor in parallel, a memory cell composed of the ferroelectric capacitor and the cell transistor, a cell block having the plurality of memory cells electrically connected in series, the drain electrode and the source electrode being as a terminals, a word line, a bit line connected to one end of the cell block, the bit line being arranged along orthogonal direction to the word line and a plate line connected to the other end of the cell block, the plate line arranged along the word line.
公开/授权文献
- US20070236979A1 NONVOLATILE FERROELECTRIC MEMORY 公开/授权日:2007-10-11