发明授权
US07652288B2 Epitaxial and polycrystalline growth of Si1-X-YGEXCY and Si1-YCY alloy layers on Si by UHV-CVD
失效
Si1-X-YGEXCY和Si1-YCY合金层通过特高压CVD在Si上的外延和多晶生长
- 专利标题： Epitaxial and polycrystalline growth of Si1-X-YGEXCY and Si1-YCY alloy layers on Si by UHV-CVD
- 专利标题（中）： Si1-X-YGEXCY和Si1-YCY合金层通过特高压CVD在Si上的外延和多晶生长
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申请号： US12163389申请日： 2008-06-27
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公开(公告)号： US07652288B2公开(公告)日： 2010-01-26
- 发明人: Jack O. Chu , Basanth Jaqannathan , Alfred Grill , Bernard S. Meyerson , John A. Ott
- 申请人： Jack O. Chu , Basanth Jaqannathan , Alfred Grill , Bernard S. Meyerson , John A. Ott
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Louis J. Percello, Esq.
- 主分类号： H01L29/00
- IPC分类号： H01L29/00
摘要：
A method and apparatus for depositing single crystal, epitaxial films of silicon carbon and silicon germanium carbon on a plurality of substrates in a hot wall, isothermal UHV-CVD system is described. In particular, a multiple wafer low temperature growth technique in the range from 350° C. to 750° C. is described for incorporating carbon epitaxially in Si and SiGe films with very abrupt and well defined junctions, but without any associated oxygen background contamination. Preferably, these epitaxial SiC and SiGeC films are in-situ doped p- or n-type and with the presence of low concentration of carbon
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