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US07652338B2 Efficient transistor structure 有权
高效晶体管结构

Efficient transistor structure
摘要:
An integrated circuit comprises first and second drain regions have a generally rectangular shape. First, second and third source regions have a generally rectangular shape, wherein the first source region is arranged between first sides of the first and second drain regions and the second and third source regions are arranged adjacent to second sides of the first and second drain regions. Fourth and fifth source regions, wherein the fourth source region is arranged adjacent to third sides of the first and second drain regions and wherein the fifth source region is arranged adjacent to fourth sides of the first and second drain regions. A gate region is arranged between the first, second, third, fourth and fifth source regions and the first and second drain regions. First and second drain contacts that are arranged in the first and second drain regions.
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