发明授权
- 专利标题: Efficient transistor structure
- 专利标题(中): 高效晶体管结构
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申请号: US11586471申请日: 2006-10-25
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公开(公告)号: US07652338B2公开(公告)日: 2010-01-26
- 发明人: Sehat Sutardja
- 申请人: Sehat Sutardja
- 申请人地址: BB St. Michael
- 专利权人: Marvell World Trade Ltd.
- 当前专利权人: Marvell World Trade Ltd.
- 当前专利权人地址: BB St. Michael
- 主分类号: H01L27/088
- IPC分类号: H01L27/088
摘要:
An integrated circuit comprises first and second drain regions have a generally rectangular shape. First, second and third source regions have a generally rectangular shape, wherein the first source region is arranged between first sides of the first and second drain regions and the second and third source regions are arranged adjacent to second sides of the first and second drain regions. Fourth and fifth source regions, wherein the fourth source region is arranged adjacent to third sides of the first and second drain regions and wherein the fifth source region is arranged adjacent to fourth sides of the first and second drain regions. A gate region is arranged between the first, second, third, fourth and fifth source regions and the first and second drain regions. First and second drain contacts that are arranged in the first and second drain regions.
公开/授权文献
- US20070034904A1 Efficient transistor structure 公开/授权日:2007-02-15
信息查询
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