发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US11461598申请日： 2006-08-01
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公开(公告)号： US07652350B2公开(公告)日： 2010-01-26
- 发明人: Kazunari Hatade
- 申请人： Kazunari Hatade
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2006-022721 20060131
- 主分类号： H01L29/745
- IPC分类号： H01L29/745
摘要：
A semiconductor device including a horizontal unit semiconductor element, the horizontal unit semiconductor element including: a) a semiconductor substrate of a first conductivity type; b) a semiconductor region of a second conductivity type formed on the semiconductor substrate; c) a collector layer of the first conductivity type formed within the semiconductor region; d) a base layer of the first conductivity type having an endless shape and formed within the semiconductor region such that the base layer is off the collector layer but surrounds the collector layer; and e) a first emitter layer of the second conductivity type formed in the base layer, the horizontal unit semiconductor element controlling, within a channel region formed in the base layer, movement of carriers between the first emitter layer and the collector layer, wherein the first emitter layer is formed by plural unit emitter layers which are formed along the base layer.
公开/授权文献
- US20070176205A1 SEMICONDUCTOR DEVICE 公开/授权日：2007-08-02
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