发明授权
- 专利标题： Voltage source for gate oxide protection
- 专利标题（中）： 电压源用于栅极氧化物保护
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申请号： US12018297申请日： 2008-01-23
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公开(公告)号： US07652524B2公开(公告)日： 2010-01-26
- 发明人: Dimitry Patent , Ravinder Rachala , Shawn Searles , Lena Ahlen , Matthew Cooke
- 申请人： Dimitry Patent , Ravinder Rachala , Shawn Searles , Lena Ahlen , Matthew Cooke
- 申请人地址： US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理机构： Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.
- 代理商 Erik A. Heter
- 主分类号： G05F1/10
- IPC分类号： G05F1/10 ; G05F3/02
摘要：
An electronic circuit. The electronic circuit includes a first circuit leg coupled to a first supply voltage node and a second supply voltage node. The first circuit leg includes a first reference current circuit configured to produce a first reference current and a second reference current circuit configured to produce a second reference current. The electronic circuit further includes a second circuit leg coupled in parallel with the first circuit leg. The second circuit leg includes a first transistor coupled to form a current mirror with the first reference current circuit and a second transistor coupled to form a current mirror with the second reference current circuit. The source terminals of each of the first and second transistors are coupled together to form a third supply voltage node.
公开/授权文献
- US20090184696A1 VOLTAGE SOURCE FOR GATE OXIDE PROTECTION 公开/授权日：2009-07-23
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