发明授权
- 专利标题: Semiconductor device using MEMS technology
- 专利标题(中): 半导体器件采用MEMS技术
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申请号: US11341853申请日: 2006-01-30
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公开(公告)号: US07655995B2公开(公告)日: 2010-02-02
- 发明人: Tatsuya Ohguro
- 申请人: Tatsuya Ohguro
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Foley & Lardner LLP
- 优先权: JP2005-109977 20050406
- 主分类号: H01L27/20
- IPC分类号: H01L27/20
摘要:
A semiconductor device using a MEMS technology according to an example of the present invention comprises a cavity, a lower electrode provided in a lower part of the cavity, an actuator provided in an upper part or inside of the cavity, an upper electrode connected to the actuator, and a conductive layer in contact with the lower electrode outside the cavity via a contact hole whose bottom face is provided above an upper face of the lower electrode in the cavity.
公开/授权文献
- US20060226934A1 Semiconductor device using MEMS technology 公开/授权日:2006-10-12
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