发明授权
US07659160B2 Field effect transistors (FETS) with inverted source/drain metallic contacts, and method of fabrication same
有权
具有反相源极/漏极金属触点的场效应晶体管（FETS）及其制造方法
- 专利标题： Field effect transistors (FETS) with inverted source/drain metallic contacts, and method of fabrication same
- 专利标题（中）： 具有反相源极/漏极金属触点的场效应晶体管（FETS）及其制造方法
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申请号： US11923075申请日： 2007-10-24
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公开(公告)号： US07659160B2公开(公告)日： 2010-02-09
- 发明人: Michael P. Belyansky , Dureseti Chidambarrao , Lawrence A. Clevenger , Kaushik A. Kumar , Carl Radens
- 申请人： Michael P. Belyansky , Dureseti Chidambarrao , Lawrence A. Clevenger , Kaushik A. Kumar , Carl Radens
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Joseph P. Abate, Esq.
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
The present invention relates to an field effect transistor (FET) comprising an inverted source/drain metallic contact that has a lower portion located in a first, lower dielectric layer and an upper portion located in a second, upper dielectric layer. The lower portion of the inverted source/drain metallic contact has a larger cross-sectional area than the upper portion. Preferably, the lower portion of the inverted source/drain metallic contact has a cross-sectional area ranging from about 0.03 μm2 to about 3.15 μm2, and such an inverted source/drain metallic contact is spaced apart from a gate electrode of the FET by a distance ranging from about 0.001 μm to about 5 μm.
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