发明授权
- 专利标题: Light-emitting semiconductor device protected against reflector metal migration
- 专利标题(中): 发光半导体器件防止反射器金属迁移
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申请号: US11764543申请日: 2007-06-18
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公开(公告)号: US07659553B2公开(公告)日: 2010-02-09
- 发明人: Takashi Kato , Junji Sato , Tetsuji Matsuo
- 申请人: Takashi Kato , Junji Sato , Tetsuji Matsuo
- 申请人地址: JP
- 专利权人: Sanken Electric Co., Ltd.
- 当前专利权人: Sanken Electric Co., Ltd.
- 当前专利权人地址: JP
- 代理机构: Woodcock Washburn LLP
- 优先权: JP2006-168572 20060619
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
An LED has a light-generating semiconductor region formed on a baseplate via a metal-made reflector layer. The light-generating semiconductor region has an active layer sandwiched between a pair of claddings of opposite conductivity types. An annular marginal space is left around the reflector layer between the light-generating semiconductor region and the substrate. In order to preclude the thermal migration of the reflector metal onto the side surfaces of the light-generating semiconductor region, with a possible short-circuiting of the pair of claddings across the active layer, an anti-migration seal is received in the annular marginal space created around the reflector layer between the light-generating semiconductor region and the baseplate.
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