Invention Grant
- Patent Title: Semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件
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Application No.: US11813502Application Date: 2006-01-06
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Publication No.: US07659772B2Publication Date: 2010-02-09
- Inventor: Masahiro Nomura , Koichi Takeda
- Applicant: Masahiro Nomura , Koichi Takeda
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Agency: Dickstein Shapiro LLP
- Priority: JP2005-001411 20050106; JP2005-168529 20050608
- International Application: PCT/JP2006/300079 WO 20060106
- International Announcement: WO2006/073176 WO 20060713
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
A semiconductor integrated circuit device includes: a switching current observer for observing a switching current; a leakage current observer for observing a leakage current; a comparator which compares the switching current and the leakage current with each other; a threshold voltage controller for controlling a substrate bias voltage in order to make a ratio of the switching current and the leakage current constant; a delay observer for observing a delay amount; and a power supply voltage controller for controlling a power supply voltage in order to keep the delay amount in a predetermined range. In the semiconductor integrated circuit device, a process which enables the minimization of an operation power is carried out by controlling the threshold voltage to make the ratio of the switching current and the leakage current constant at a given clock frequency and controlling the power supply voltage to guarantee the operating speed.
Public/Granted literature
- US20080191791A1 Semiconductor Integrated Circuit Device Public/Granted day:2008-08-14
Information query
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