Invention Grant
US07659787B2 Circuit for generating clock of semiconductor memory apparatus 有权
用于产生半导体存储装置的时钟的电路

  • Patent Title: Circuit for generating clock of semiconductor memory apparatus
  • Patent Title (中): 用于产生半导体存储装置的时钟的电路
  • Application No.: US11826813
    Application Date: 2007-07-18
  • Publication No.: US07659787B2
    Publication Date: 2010-02-09
  • Inventor: Sang-Kyu Lee
  • Applicant: Sang-Kyu Lee
  • Applicant Address: KR Gyeonggi-do
  • Assignee: Hynix Semiconductor Inc.
  • Current Assignee: Hynix Semiconductor Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: Venable LLP
  • Agent Jeffri A. Kaminski
  • Priority: KR10-2006-0123583 20061207
  • Main IPC: H03L1/00
  • IPC: H03L1/00
Circuit for generating clock of semiconductor memory apparatus
Abstract:
A circuit for generating a clock of a semiconductor memory apparatus is provided. A reference voltage generator is configured to generate a reference voltage. A reference current generator is configured to generate a reference current that has a constant current value regardless of a change in temperature. An oscillator is configured to receive the reference voltage and the reference current to generate a clock that has constant frequency.
Public/Granted literature
Information query
Patent Agency Ranking
0/0