Invention Grant
US07660163B2 Method and unit for verifying initial state of non-volatile memory device
有权
用于验证非易失性存储器件的初始状态的方法和单元
- Patent Title: Method and unit for verifying initial state of non-volatile memory device
- Patent Title (中): 用于验证非易失性存储器件的初始状态的方法和单元
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Application No.: US11208742Application Date: 2005-08-23
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Publication No.: US07660163B2Publication Date: 2010-02-09
- Inventor: Se-Jin Ahn
- Applicant: Se-Jin Ahn
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics, Co., Ltd.
- Current Assignee: Samsung Electronics, Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness Dickey & Pierce, P.L.C.
- Priority: KR10-2004-0066664 20040824
- Main IPC: G11C16/06
- IPC: G11C16/06
Abstract:
A method of verifying an initial state of a non-volatile memory device, a command for verify an initial state of a unit and a unit address corresponding to the unit received from a memory controller. An initial state of memory cells, which correspond to the unit address, is verified in response to the command. A verification result of the unit is transmitted to the memory controller.
Public/Granted literature
- US20060044875A1 Method and unit for verifying initial state of non-volatile memory device Public/Granted day:2006-03-02
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