Invention Grant
US07662690B2 Method of preparing a semiconductor substrate utilizing plural implants under an isolation region to isolate adjacent wells
有权
制备半导体衬底的方法，该半导体衬底利用在隔离区域下的多个植入物隔离相邻的孔
- Patent Title: Method of preparing a semiconductor substrate utilizing plural implants under an isolation region to isolate adjacent wells
- Patent Title (中): 制备半导体衬底的方法，该半导体衬底利用在隔离区域下的多个植入物隔离相邻的孔
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Application No.: US11343695Application Date: 2006-01-31
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Publication No.: US07662690B2Publication Date: 2010-02-16
- Inventor: Shaoping Tang , Zhiqiang Wu
- Applicant: Shaoping Tang , Zhiqiang Wu
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/761
- IPC: H01L21/761
Abstract:
Multiple blanket implantations of one or more p type dopants into a semiconductor substrate are performed to facilitate isolation between nwell regions subsequently formed in the substrate. The blanket implantations are performed through isolation regions in the substrate so that the p type dopants are implanted to depths sufficient to separate the nwell regions. This increased concentration of p type dopants helps to mitigate leakage between the nwell regions as the nwell regions are brought closer together to increase packing densities.
Public/Granted literature
- US20070176263A1 Nwell to nwell isolation Public/Granted day:2007-08-02
Information query
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