Invention Grant
- Patent Title: Gettering of silicon on insulator using relaxed silicon germanium epitaxial proximity layers
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Application No.: US10443337Application Date: 2003-05-21
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Publication No.: US07662701B2Publication Date: 2010-02-16
- Inventor: Leonard Forbes
- Applicant: Leonard Forbes
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/322
- IPC: H01L21/322
Abstract:
One aspect of this disclosure relates to a method for creating proximity gettering sites in a silicon on insulator (SOI) wafer. In various embodiments of this method, a relaxed silicon germanium region is formed over an insulator region of the SOI to be proximate to a device region. The relaxed silicon germanium region generates defects to getter impurities from the device region. Other aspects are provided herein.
Public/Granted literature
- US20040235264A1 Gettering of silicon on insulator using relaxed silicon germanium epitaxial proximity layers Public/Granted day:2004-11-25
Information query
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