Invention Grant
- Patent Title: Method of manufacturing a ferroelectric capacitor with a hydrogen barrier layer
- Patent Title (中): 制造具有氢阻挡层的铁电电容器的方法
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Application No.: US11456371Application Date: 2006-07-10
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Publication No.: US07662724B2Publication Date: 2010-02-16
- Inventor: Masao Nakayama , Daisuke Kobayashi
- Applicant: Masao Nakayama , Daisuke Kobayashi
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2005-201796 20050711
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A method for manufacturing a capacitor includes the steps of: forming a lower electrode above a base substrate; forming a dielectric film composed of ferroelectric material or piezoelectric material above the lower electrode; forming an upper electrode above the dielectric film; forming a silicon oxide film that covers at least the dielectric film and the upper electrode; and forming a hydrogen barrier film that covers the silicon oxide film.
Public/Granted literature
- US20070010063A1 METHOD FOR MANUFACTURING CAPACITOR Public/Granted day:2007-01-11
Information query
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