发明授权
- 专利标题： Method of manufacturing a ferroelectric capacitor with a hydrogen barrier layer
- 专利标题（中）： 制造具有氢阻挡层的铁电电容器的方法
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申请号： US11456371申请日： 2006-07-10
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公开(公告)号： US07662724B2公开(公告)日： 2010-02-16
- 发明人: Masao Nakayama , Daisuke Kobayashi
- 申请人： Masao Nakayama , Daisuke Kobayashi
- 申请人地址： JP
- 专利权人： Seiko Epson Corporation
- 当前专利权人： Seiko Epson Corporation
- 当前专利权人地址： JP
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： JP2005-201796 20050711
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A method for manufacturing a capacitor includes the steps of: forming a lower electrode above a base substrate; forming a dielectric film composed of ferroelectric material or piezoelectric material above the lower electrode; forming an upper electrode above the dielectric film; forming a silicon oxide film that covers at least the dielectric film and the upper electrode; and forming a hydrogen barrier film that covers the silicon oxide film.
公开/授权文献
- US20070010063A1 METHOD FOR MANUFACTURING CAPACITOR 公开/授权日：2007-01-11
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