Invention Grant
- Patent Title: High current density particle beam system
- Patent Title (中): 高电流密度粒子束系统
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Application No.: US10593246Application Date: 2005-02-17
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Publication No.: US07663102B2Publication Date: 2010-02-16
- Inventor: Juergen Frosien
- Applicant: Juergen Frosien
- Applicant Address: DE Heimstetten
- Assignee: ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH
- Current Assignee: ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH
- Current Assignee Address: DE Heimstetten
- Agency: Patterson & Sheridan, LLP
- Priority: EP04006692 20040319
- International Application: PCT/EP2005/001637 WO 20050217
- International Announcement: WO2005/096343 WO 20051013
- Main IPC: H01J37/09
- IPC: H01J37/09
Abstract:
The present invention relates to charged particle beam devices. The devices comprise an emitter for emitting charged particles; an aperture arrangement with at least two apertures for separating the emitted charged particles into at least two independent charged particle beams; and an objective lens for focusing the at least two independent charged particle beams, whereby the independent charged particle beams are focused onto the same location within the focal plane.
Public/Granted literature
- US20070284536A1 High Current Density Particle Beam System Public/Granted day:2007-12-13
Information query
