Invention Grant
- Patent Title: Phase change memory cell and method of formation
- Patent Title (中): 相变记忆单元及其形成方法
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Application No.: US11963409Application Date: 2007-12-21
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Publication No.: US07663137B2Publication Date: 2010-02-16
- Inventor: Kristy A. Campbell
- Applicant: Kristy A. Campbell
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L29/26
- IPC: H01L29/26
Abstract:
A phase change memory element and methods for forming the same are provided. The memory element includes a first electrode and a chalcogenide comprising phase change material layer over the first electrode. A metal-chalcogenide layer is over the phase change material layer. The metal chalcogenide layer is tin-telluride. A second electrode is over the metal-chalcogenide layer. The memory element is configured to have reduced current requirements.
Public/Granted literature
- US20080142773A1 PHASE CHANGE MEMORY CELL AND METHOD OF FORMATION Public/Granted day:2008-06-19
Information query
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