Invention Grant
- Patent Title: Vertical floating body cell of a semiconductor device and method for fabricating the same
- Patent Title (中): 半导体器件的垂直浮体单元及其制造方法
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Application No.: US11866950Application Date: 2007-10-03
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Publication No.: US07663188B2Publication Date: 2010-02-16
- Inventor: Sung Woong Chung
- Applicant: Sung Woong Chung
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR10-2007-0075590 20070727
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A semiconductor device includes a tube-type channel formed over a semiconductor substrate. The tube-type channel is connected to first and second conductive lines. A bias electrode is formed in the tube-type channel. The bias electrode is connected to the semiconductor substrate. An insulating film is disposed between the tube-type channel and the bias electrode. A surrounding gate electrode is formed over the tube-type channel.
Public/Granted literature
- US20090026541A1 VERTICAL FLOATING BODY CELL OF A SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2009-01-29
Information query
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