Invention Grant
US07663191B2 Semiconductor device and manufacturing method thereof with rounded gate including a silicide on the top and at the corners
有权
半导体器件及其制造方法，其具有在顶部和拐角处具有硅化物的圆形栅极
- Patent Title: Semiconductor device and manufacturing method thereof with rounded gate including a silicide on the top and at the corners
- Patent Title (中): 半导体器件及其制造方法，其具有在顶部和拐角处具有硅化物的圆形栅极
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Application No.: US11178612Application Date: 2005-07-12
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Publication No.: US07663191B2Publication Date: 2010-02-16
- Inventor: Kenshi Kanegae , Akihiko Tsuzumitani , Atsushi Ikeda
- Applicant: Kenshi Kanegae , Akihiko Tsuzumitani , Atsushi Ikeda
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2004-204727 20040712
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L27/095
Abstract:
In order that a top surface of a gate electrode does not have sharp portions, ends of the top surface of the gate electrode are rounded before refractory metal is deposited for silicidation. This reduces intensive application of film stresses which are generated in heat treatment, enabling formation of a silicide layer with a uniform, sufficient thickness.
Public/Granted literature
- US20060006478A1 Semiconductor device and manufacturing method thereof Public/Granted day:2006-01-12
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