发明授权
US07663191B2 Semiconductor device and manufacturing method thereof with rounded gate including a silicide on the top and at the corners
有权
半导体器件及其制造方法，其具有在顶部和拐角处具有硅化物的圆形栅极
- 专利标题： Semiconductor device and manufacturing method thereof with rounded gate including a silicide on the top and at the corners
- 专利标题（中）： 半导体器件及其制造方法，其具有在顶部和拐角处具有硅化物的圆形栅极
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申请号： US11178612申请日： 2005-07-12
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公开(公告)号： US07663191B2公开(公告)日： 2010-02-16
- 发明人: Kenshi Kanegae , Akihiko Tsuzumitani , Atsushi Ikeda
- 申请人： Kenshi Kanegae , Akihiko Tsuzumitani , Atsushi Ikeda
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2004-204727 20040712
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L27/095
摘要：
In order that a top surface of a gate electrode does not have sharp portions, ends of the top surface of the gate electrode are rounded before refractory metal is deposited for silicidation. This reduces intensive application of film stresses which are generated in heat treatment, enabling formation of a silicide layer with a uniform, sufficient thickness.
公开/授权文献
- US20060006478A1 Semiconductor device and manufacturing method thereof 公开/授权日：2006-01-12
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