Invention Grant
US07663202B2 Nanowire photodiodes and methods of making nanowire photodiodes
失效
纳米线光电二极管及制造纳米线光电二极管的方法
- Patent Title: Nanowire photodiodes and methods of making nanowire photodiodes
- Patent Title (中): 纳米线光电二极管及制造纳米线光电二极管的方法
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Application No.: US11819226Application Date: 2007-06-26
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Publication No.: US07663202B2Publication Date: 2010-02-16
- Inventor: Shih-Yuan Wang , Michael Renne Ty Tan , Alexandre M. Bratkovski , R. Stanley Williams , Nobuhiko Kobayashi
- Applicant: Shih-Yuan Wang , Michael Renne Ty Tan , Alexandre M. Bratkovski , R. Stanley Williams , Nobuhiko Kobayashi
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H01L31/058
- IPC: H01L31/058
Abstract:
Nanowire-based photodiodes are disclosed. The photodiodes include a first optical waveguide having a tapered first end, a second optical waveguide having a tapered second end, and at least one nanowire comprising at least one semiconductor material connecting the first and second ends in a bridging configuration. Methods of making the photodiodes are also disclosed.
Public/Granted literature
- US20090001498A1 Nanowire photodiodes and methods of making nanowire photodiodes Public/Granted day:2009-01-01
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