Invention Grant
- Patent Title: High-capacity memory card and method of making the same
- Patent Title (中): 大容量存储卡及其制作方法
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Application No.: US11188948Application Date: 2005-07-25
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Publication No.: US07663214B2Publication Date: 2010-02-16
- Inventor: Wei Koh
- Applicant: Wei Koh
- Applicant Address: US CA Fountain Valley
- Assignee: Kingston Technology Corporation
- Current Assignee: Kingston Technology Corporation
- Current Assignee Address: US CA Fountain Valley
- Agency: Sawyer Law Group, P.C.
- Main IPC: H01L23/02
- IPC: H01L23/02
Abstract:
A memory card assembly with a simplified structure. The memory card assembly has a memory card assembly a printed wiring board substrate and at least one integrated circuit unit mounted and electrically connected to the printed wiring board substrate. A rigid ring is fitted over a periphery of the printed wiring board substrate to encircle the integrated circuit die therein. Thereby, a dam with an open top is constructed over the printed wiring board substrate. A filler resin material is then filled within the open dam to cover the printed wiring board substrate and integrated circuit unit.
Public/Granted literature
- US20070018297A1 High-capacity memory card and method of making the same Public/Granted day:2007-01-25
Information query
IPC分类:
