Invention Grant
- Patent Title: Semiconductor die with reduced bump-to-pad ratio
- Patent Title (中): 半导体芯片具有降低的焊盘与焊盘的比例
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Application No.: US11655644Application Date: 2007-01-18
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Publication No.: US07663235B2Publication Date: 2010-02-16
- Inventor: Fang Lu , Ali Salem
- Applicant: Fang Lu , Ali Salem
- Applicant Address: US CA Irvine
- Assignee: Broadcom Corporation
- Current Assignee: Broadcom Corporation
- Current Assignee Address: US CA Irvine
- Agency: Farjami & Farjami LLP
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
According to one exemplary embodiment, a semiconductor die includes at least one pad ring situated on an active surface of the semiconductor die, where the at least one pad ring includes a number of pads. The semiconductor die further includes a number of bumps including at least one shared bump. The at least one shared bump is shared by at least two pads, thereby causing the number of bumps to be fewer than the number of pads. The at least two pads can be at least two ground pads, at least two power pads, or at least two reference voltage pads.
Public/Granted literature
- US20080122080A1 Semiconductor die with reduced bump-to-pad ratio Public/Granted day:2008-05-29
Information query
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