Invention Grant
- Patent Title: Electric power semiconductor device
- Patent Title (中): 电力半导体装置
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Application No.: US11873030Application Date: 2007-10-16
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Publication No.: US07663252B2Publication Date: 2010-02-16
- Inventor: Junji Yamada , Seiji Saiki
- Applicant: Junji Yamada , Seiji Saiki
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee: Mitsubishi Denki Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2002-253668 20020830
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
An electric power semiconductor device including first and second circuit patterns formed on main surfaces of first and second insulating substrates, respectively, first and second semiconductor chips mounted on the first and second circuit patterns, respectively, a multilayer electrode plate assembly disposed between the first and second insulating substrates, having first, second and third electrode terminals provided with a distance from each other, a first connecting conductor made by wire bonding for connecting the first and second semiconductor chips to the first and second electrode terminals, and a second connecting conductor having an extending portion extended from a part of the third electrode terminal to be connected to the second circuit pattern, and the connection between the extending portion of the third electrode terminal and the second circuit pattern is implemented by a solder.
Public/Granted literature
- US20080164621A1 ELECTRIC POWER SEMICONDUCTOR DEVICE Public/Granted day:2008-07-10
Information query
IPC分类: