Invention Grant
US07663909B2 Integrated circuit having a phase change memory cell including a narrow active region width
失效
具有包括窄有源区宽度的相变存储单元的集成电路
- Patent Title: Integrated circuit having a phase change memory cell including a narrow active region width
- Patent Title (中): 具有包括窄有源区宽度的相变存储单元的集成电路
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Application No.: US11483873Application Date: 2006-07-10
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Publication No.: US07663909B2Publication Date: 2010-02-16
- Inventor: Jan Boris Philipp , Thomas Happ
- Applicant: Jan Boris Philipp , Thomas Happ
- Applicant Address: US NC Cary
- Assignee: Qimonda North America Corp.
- Current Assignee: Qimonda North America Corp.
- Current Assignee Address: US NC Cary
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A memory cell includes a first electrode and an opposing second electrode, and a memory stack between the first and second electrodes. The memory stack includes a first layer of thermal isolation material contacting the first electrode, a second layer of thermal isolation material contacting the second electrode, and a phase change material between the first layer of thermal isolation material and the second layer of thermal isolation material. In this regard, the phase change material defines an active region width that is less than a width of either of the first layer of thermal isolation material and the second layer of thermal isolation material.
Public/Granted literature
- US20080006811A1 Integrated circuit havng a memory cell Public/Granted day:2008-01-10
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