Invention Grant
- Patent Title: Programming a non-volatile memory device
- Patent Title (中): 编程非易失性存储器件
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Application No.: US12170607Application Date: 2008-07-10
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Publication No.: US07663930B2Publication Date: 2010-02-16
- Inventor: Seiichi Aritome
- Applicant: Seiichi Aritome
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A non-volatile memory device that changes the programming step voltage between the source side of the array and the drain side of the array. After the initial programming pulse, a verify operation determines if the cell has been programmed. If the cell is still erased, the initial programming voltage is increased by the step voltage. The step voltage for the lowest word line near the source line is lower than the step voltage for the word line closest to the drain line.
Public/Granted literature
- US20080266972A1 PROGRAMMING A NON-VOLATILE MEMORY DEVICE Public/Granted day:2008-10-30
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