Invention Grant
- Patent Title: Method for improving the thermal stability of silicide
- Patent Title (中): 改善硅化物热稳定性的方法
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Application No.: US11456595Application Date: 2006-07-11
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Publication No.: US07666729B2Publication Date: 2010-02-23
- Inventor: Jiong-Ping Lu , Jiejie Xu
- Applicant: Jiong-Ping Lu , Jiejie Xu
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Rose Alyssa Keagy; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8238
Abstract:
An embodiment of the invention is a method of making a transistor by performing an ion implant on a gate electrode layer 110. The method may include forming an interface layer 200 over the semiconductor substrate 20 and performing an anneal to create a silicide 190 on the top surface of the gate electrode 110.
Public/Granted literature
- US20060246668A1 Method for Improving the Thermal Stability of Silicide Public/Granted day:2006-11-02
Information query
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