发明授权
- 专利标题： Bipolar device having improved capacitance
- 专利标题（中）： 具有改善电容的双极器件
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申请号： US11531477申请日： 2006-09-13
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公开(公告)号： US07666750B2公开(公告)日： 2010-02-23
- 发明人: Alan S. Chen , Mark Dyson , Daniel C. Kerr , Nace M. Rossi
- 申请人： Alan S. Chen , Mark Dyson , Daniel C. Kerr , Nace M. Rossi
- 申请人地址： US PA Allentown
- 专利权人： Agere Systems Inc.
- 当前专利权人： Agere Systems Inc.
- 当前专利权人地址： US PA Allentown
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; H01L21/266
摘要：
The invention, in one aspect, provides a semiconductor device that comprises a collector located in a semiconductor substrate and an isolation region located under the collector, wherein a peak dopant concentration of the isolation region is separated from a peak dopant concentration of the collector by at least about 0.9 microns. The invention also provides a method for forming this device.
公开/授权文献
- US20080064177A1 Bipolar Device Having Improved Capacitance 公开/授权日：2008-03-13