发明授权
US07666770B2 Method of controlling impurity doping and impurity doping apparatus
失效
控制杂质掺杂和杂质掺杂装置的方法
- 专利标题： Method of controlling impurity doping and impurity doping apparatus
- 专利标题（中）： 控制杂质掺杂和杂质掺杂装置的方法
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申请号： US10570787申请日： 2004-09-06
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公开(公告)号： US07666770B2公开(公告)日： 2010-02-23
- 发明人: Yuichiro Sasaki , Ichiro Nakayama , Tomohiro Okumura , Satoshi Maeshima
- 申请人： Yuichiro Sasaki , Ichiro Nakayama , Tomohiro Okumura , Satoshi Maeshima
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： Wenderoth, Lind & Ponack, L.L.P.
- 优先权： JP2003-321385 20030912
- 国际申请： PCT/JP2004/013260 WO 20040906
- 国际公布： WO2005/027208 WO 20050324
- 主分类号： H01L21/42
- IPC分类号： H01L21/42
摘要：
A method is provided for controlling a dose amount of dopant to be doped into an object to be processed in plasma doping. According to the method, the doping control is formed of the following processes: determining the temperature of the object, the amount of ions having dopant in plasma that collide with the object, and types of gases in plasma during doping; calculating a dose amount by neutral gas according to the temperature of the object, and a dose amount by ions from the determined amount of ions containing dopant that collide with the object; and carrying out doping so that the sum of the dose amount by neutral gas and the dose amount by ions equal to a predetermined dose amount.
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