发明授权
US07666788B2 Methods for forming conductive vias in semiconductor device components 有权
在半导体器件部件中形成导电通孔的方法

  • 专利标题: Methods for forming conductive vias in semiconductor device components
  • 专利标题(中): 在半导体器件部件中形成导电通孔的方法
  • 申请号: US11717437
    申请日: 2007-03-12
  • 公开(公告)号: US07666788B2
    公开(公告)日: 2010-02-23
  • 发明人: Nishant Sinha
  • 申请人: Nishant Sinha
  • 申请人地址: US ID Boise
  • 专利权人: Micron Technology, Inc.
  • 当前专利权人: Micron Technology, Inc.
  • 当前专利权人地址: US ID Boise
  • 代理机构: TraskBritt
  • 主分类号: H01L21/44
  • IPC分类号: H01L21/44
Methods for forming conductive vias in semiconductor device components
摘要:
A method for forming conductive vias in a substrate of a semiconductor device component includes forming one or more holes, or apertures or cavities, in the substrate so as to extend only partially through the substrate. A barrier layer, such as an insulative layer, may be formed on surfaces of each hole. Surfaces within each hole may be coated with a seed layer, which facilitates adhesion of conductive material within each hole. Conductive material is introduced into each hole. Introduction of the conductive material may be effected by deposition or plating. Alternatively, conductive material in the form of solder may be introduced into each hole.
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