Invention Grant
- Patent Title: Semiconductor thermal process control utilizing position oriented temperature generated thermal mask
- Patent Title (中): 半导体热过程控制利用定位温度产生的热掩模
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Application No.: US11103968Application Date: 2005-04-11
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Publication No.: US07667162B2Publication Date: 2010-02-23
- Inventor: Wolfgang R. Aderhold , Balasubramanian Ramachandran , Leonid M. Tertitski , Patrick F. Stone
- Applicant: Wolfgang R. Aderhold , Balasubramanian Ramachandran , Leonid M. Tertitski , Patrick F. Stone
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Townsend and Townsend and Crew, LLP
- Main IPC: H05B1/02
- IPC: H05B1/02 ; C30B25/16 ; F27B5/14

Abstract:
During fabrication, a rotating semiconductor substrate is radiated in accordance with a thermal recipe. Temperature measurements of the semiconductor substrate are obtained along with the position of the semiconductor substrate at the time of each temperature measurement. It is then determined for the position of the semiconductor substrate whether at least one particular temperature measurement of the temperature measurements should be filtered. If so, at least one filtered temperature measurement is obtained. The radiation of the semiconductor substrate is subsequently controlled based on the temperature measurements, the at least one filtered temperature measurement, and the thermal recipe.
Public/Granted literature
- US20050254804A1 Semiconductor thermal process control Public/Granted day:2005-11-17
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