发明授权
- 专利标题: Metal carbide gate structure and method of fabrication
- 专利标题(中): 金属硬质合金门结构及其制造方法
-
申请号: US11372140申请日: 2006-03-10
-
公开(公告)号: US07667278B2公开(公告)日: 2010-02-23
- 发明人: Cyril Cabral, Jr. , Christophe Detavernier , Rajarao Jammy , Katherine L. Saenger
- 申请人: Cyril Cabral, Jr. , Christophe Detavernier , Rajarao Jammy , Katherine L. Saenger
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Connolly Bove Lodge & Hutz LLP
- 主分类号: H01L29/76
- IPC分类号: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119 ; H01L29/06 ; H01L29/12
摘要:
A semiconductor device such as a complementary metal oxide semiconductor (CMOS) including at least one FET that includes a gate electrode including a metal carbide and method of fabrication are provided. The CMOS comprises dual work function metal gate electrodes whereby the dual work functions are provided by a metal and a carbide of a metal.
公开/授权文献
- US20060186490A1 Metal carbide gate structure and method of fabrication 公开/授权日:2006-08-24