发明授权
- 专利标题： Metal carbide gate structure and method of fabrication
- 专利标题（中）： 金属硬质合金门结构及其制造方法
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申请号： US11372140申请日： 2006-03-10
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公开(公告)号： US07667278B2公开(公告)日： 2010-02-23
- 发明人: Cyril Cabral, Jr. , Christophe Detavernier , Rajarao Jammy , Katherine L. Saenger
- 申请人： Cyril Cabral, Jr. , Christophe Detavernier , Rajarao Jammy , Katherine L. Saenger
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Connolly Bove Lodge & Hutz LLP
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119 ; H01L29/06 ; H01L29/12
摘要：
A semiconductor device such as a complementary metal oxide semiconductor (CMOS) including at least one FET that includes a gate electrode including a metal carbide and method of fabrication are provided. The CMOS comprises dual work function metal gate electrodes whereby the dual work functions are provided by a metal and a carbide of a metal.
公开/授权文献
- US20060186490A1 Metal carbide gate structure and method of fabrication 公开/授权日：2006-08-24