Invention Grant
US07668028B2 Dual in-line memory module, memory test system, and method for operating the dual in-line memory module
失效
双列直插式存储器模块，存储器测试系统和用于操作双列直插存储器模块的方法
- Patent Title: Dual in-line memory module, memory test system, and method for operating the dual in-line memory module
- Patent Title (中): 双列直插式存储器模块，存储器测试系统和用于操作双列直插存储器模块的方法
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Application No.: US11819812Application Date: 2007-06-29
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Publication No.: US07668028B2Publication Date: 2010-02-23
- Inventor: Kyung-Hoon Kim , Yong-Ki Kim
- Applicant: Kyung-Hoon Kim , Yong-Ki Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor, Inc.
- Current Assignee: Hynix Semiconductor, Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Law Firm PLC
- Priority: KR10-2006-0059594 20060629; KR10-2007-0041097 20070427
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/10 ; G11C8/00
Abstract:
A dual in-line memory module (DIMM) for use in test includes a memory array with a plurality of memories, a test signal input/output unit, and a normal data input/output unit. The test signal input/output unit is provided in the respective memories to perform an input/output operation of a test signal with an external test mode controller for a test mode operation. The normal data input/output unit is provided in the respective memories to perform an input/output operation of a normal data with an external memory controller for a normal mode operation.
Public/Granted literature
- US20080002493A1 Dual in-line memory module, memory test system, and method for operating the dual in-line memory module Public/Granted day:2008-01-03
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