Invention Grant
- Patent Title: Flash storage system with write-erase abort detection mechanism
- Patent Title (中): 闪存存储系统具有写擦除中止检测机制
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Application No.: US11936440Application Date: 2007-11-07
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Publication No.: US07669004B2Publication Date: 2010-02-23
- Inventor: Jason T. Lin , Kevin M. Conley , Robert C. Chang
- Applicant: Jason T. Lin , Kevin M. Conley , Robert C. Chang
- Applicant Address: US CA Milpitas
- Assignee: SanDisk Corporation
- Current Assignee: SanDisk Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Davis Wright Tremaine LLP
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
The present invention presents a non-volatile memory and method for its operation that ensures reliable mechanism for write and erase abort detection in the event of lost of power during non-volatile memory programming and erasing with minimized system performance penalty. During a multi-sector write process, an indication of a successful write in one sector is written into the overhead of the following sector at the same time as the following sector's data content is written. The last sector written will additionally have an indication of its own successful write written into its overhead. For erase, an erase abort flag in the first sector of the block can be marked after a successful erase operation.
Public/Granted literature
- US20080065818A1 Flash Storage System with Write-Erase Abort Detection Mechanism Public/Granted day:2008-03-13
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