发明授权
- 专利标题: Flash storage system with write-erase abort detection mechanism
- 专利标题(中): 闪存存储系统具有写擦除中止检测机制
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申请号: US11936440申请日: 2007-11-07
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公开(公告)号: US07669004B2公开(公告)日: 2010-02-23
- 发明人: Jason T. Lin , Kevin M. Conley , Robert C. Chang
- 申请人: Jason T. Lin , Kevin M. Conley , Robert C. Chang
- 申请人地址: US CA Milpitas
- 专利权人: SanDisk Corporation
- 当前专利权人: SanDisk Corporation
- 当前专利权人地址: US CA Milpitas
- 代理机构: Davis Wright Tremaine LLP
- 主分类号: G06F12/00
- IPC分类号: G06F12/00
摘要:
The present invention presents a non-volatile memory and method for its operation that ensures reliable mechanism for write and erase abort detection in the event of lost of power during non-volatile memory programming and erasing with minimized system performance penalty. During a multi-sector write process, an indication of a successful write in one sector is written into the overhead of the following sector at the same time as the following sector's data content is written. The last sector written will additionally have an indication of its own successful write written into its overhead. For erase, an erase abort flag in the first sector of the block can be marked after a successful erase operation.