发明授权
- 专利标题： Method of manufacturing organic thin film transistor and organic thin film transistor
- 专利标题（中）： 制造有机薄膜晶体管和有机薄膜晶体管的方法
-
申请号： US11803992申请日： 2007-05-16
-
公开(公告)号： US07670870B2公开(公告)日： 2010-03-02
- 发明人: Tomoo Izumi , Masakazu Okada
- 申请人： Tomoo Izumi , Masakazu Okada
- 申请人地址： JP Tokyo
- 专利权人： Konica Minolta Holdings, Inc.
- 当前专利权人： Konica Minolta Holdings, Inc.
- 当前专利权人地址： JP Tokyo
- 代理机构： Brinks Hofer Gilson & Lione
- 优先权： JP2006-141155 20060522
- 主分类号： H01L51/40
- IPC分类号： H01L51/40
摘要：
A method of manufacturing an organic thin film transistor characterized by low costs and high performances, the method in which the self-assemble monolayer is formed in a short period of time, and the organic thin film transistor are provided. A method of manufacturing an organic thin film a transistor having a gate electrode, a semiconductor layer, a source electrode, and a drain electrode on a substrate, wherein a semiconductor solution as a mixture of the self-assembled monolayer material and organic semiconductor material is coated between the source electrode and drain electrode, whereby a semiconductor layer is formed.
公开/授权文献
信息查询
IPC分类:
