发明授权
- 专利标题： Copper metallization of through silicon via
- 专利标题（中）： 通过硅通孔的铜金属化
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申请号： US12185641申请日： 2008-08-04
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公开(公告)号： US07670950B2公开(公告)日： 2010-03-02
- 发明人: Thomas B. Richardson , Yun Zhang , Chen Wang , Vincent Paneccasio, Jr. , Cai Wang , Xuan Lin , Richard Hurtubise , Joseph A. Abys
- 申请人： Thomas B. Richardson , Yun Zhang , Chen Wang , Vincent Paneccasio, Jr. , Cai Wang , Xuan Lin , Richard Hurtubise , Joseph A. Abys
- 申请人地址： US CT West Haven
- 专利权人： Enthone Inc.
- 当前专利权人： Enthone Inc.
- 当前专利权人地址： US CT West Haven
- 代理机构： Senniger Powers LLP
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A method for metallizing a through silicon via feature in a semiconductor integrated circuit device substrate comprising immersing the semiconductor integrated circuit device substrate into an electrolytic copper deposition composition comprising a source of copper ions, an organic sulfonic acid or inorganic acid, or one or more organic compounds selected from among polarizers and/or depolarizers, and chloride ions.
公开/授权文献
- US20090035940A1 COPPER METALLIZATION OF THROUGH SILICON VIA 公开/授权日：2009-02-05
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