发明授权
- 专利标题： Memory device etch methods
- 专利标题（中）： 存储器件蚀刻方法
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申请号： US11616085申请日： 2006-12-26
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公开(公告)号： US07670959B2公开(公告)日： 2010-03-02
- 发明人: Angela T. Hui , Jihwan Choi
- 申请人： Angela T. Hui , Jihwan Choi
- 申请人地址： US CA Sunnyvale US CA Sunnyvale
- 专利权人： Spansion LLC,Advanced Micro Devices, Inc.
- 当前专利权人： Spansion LLC,Advanced Micro Devices, Inc.
- 当前专利权人地址： US CA Sunnyvale US CA Sunnyvale
- 代理机构： Harrity & Harrity, LLP
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/461
摘要：
A method of manufacturing a memory device forms a first dielectric layer over a substrate, forms a charge storage layer over the first dielectric layer, forms a second dielectric layer over the charge storage layer, and forms a control gate layer over the second dielectric layer. The method also forms a hard mask layer over the control gate layer, forms a bottom anti-reflective coating (BARC) layer over the hard mask layer, and provides an etch chemistry that includes tetrafluoromethane (CF4) and trifluoromethane (CHF3) to etch at least the control gate layer.
公开/授权文献
- US20080153298A1 MEMORY DEVICE ETCH METHODS 公开/授权日：2008-06-26