发明授权
- 专利标题： Image sensor and fabrication method thereof
- 专利标题（中）： 图像传感器及其制造方法
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申请号： US11686957申请日： 2007-03-15
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公开(公告)号： US07671385B2公开(公告)日： 2010-03-02
- 发明人: Hsin-Heng Wang , Chiu-Tsung Huang , Shih-Siang Lin
- 申请人： Hsin-Heng Wang , Chiu-Tsung Huang , Shih-Siang Lin
- 申请人地址： TW Hsin-Chu
- 专利权人： Powerchip Semiconductor Corp.
- 当前专利权人： Powerchip Semiconductor Corp.
- 当前专利权人地址： TW Hsin-Chu
- 代理商 Winston Hsu
- 主分类号： H01L31/0224
- IPC分类号： H01L31/0224 ; H01L31/075
摘要：
An image sensor contains a semiconductor substrate, a plurality of pixels defined on the semiconductor substrate, a photo conductive layer and a transparent conductive layer formed on the pixel electrodes of the pixels in order, and a shield device positioned between any two adjacent pixel electrodes. The shield device has a shield electrode and an isolation structure surrounding the shield electrode so that the shield electrode is isolated from the pixel electrodes and the photo conductive layer by the isolation structure.
公开/授权文献
- US20080224136A1 IMAGE SENSOR AND FABRICATION METHOD THEREOF 公开/授权日：2008-09-18
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