发明授权
US07672088B2 Heusler alloy with insertion layer to reduce the ordering temperature for CPP, TMR, MRAM, and other spintronics applications
有权
Heusler合金与插入层，以降低CPP，TMR，MRAM和其他自旋电子应用的订购温度
- 专利标题： Heusler alloy with insertion layer to reduce the ordering temperature for CPP, TMR, MRAM, and other spintronics applications
- 专利标题（中）： Heusler合金与插入层，以降低CPP，TMR，MRAM和其他自旋电子应用的订购温度
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申请号： US11472126申请日： 2006-06-21
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公开(公告)号： US07672088B2公开(公告)日： 2010-03-02
- 发明人: Kunliang Zhang , Min Li , Yu-Hsia Chen , Hui-Chuan Wang , Tong Zhao
- 申请人： Kunliang Zhang , Min Li , Yu-Hsia Chen , Hui-Chuan Wang , Tong Zhao
- 申请人地址： US CA Milpitas
- 专利权人： Headway Technologies, Inc.
- 当前专利权人： Headway Technologies, Inc.
- 当前专利权人地址： US CA Milpitas
- 代理机构： Saile Ackerman LLC
- 代理商 Stephen B. Ackerman
- 主分类号： G11B5/39
- IPC分类号： G11B5/39
摘要：
A spin valve structure is disclosed in which an AP1 layer and/or free layer are made of a laminated Heusler alloy having Al or FeCo insertion layers. The ordering temperature of a Heusler alloy such as Co2MnSi is thereby lowered from about 350° C. to 280° C. which becomes practical for spintronics device applications. The insertion layer is 0.5 to 5 Angstroms thick and may also be Sn, Ge, Ga, Sb, or Cr. The AP1 layer or free layer can contain one or two additional FeCo layers to give a configuration represented by FeCo/[HA/IL]nHA, [HA/IL]nHA/FeCo, or FeCo/[HA/IL]nHA/FeCo where n is an integer ≧1, HA is a Heusler alloy layer, and IL is an insertion layer. Optionally, a Heusler alloy insertion scheme is possible by doping Al or FeCo in the HA layer. For example, Co2MnSi may be co-sputtered with an Al or FeCo target or with a Co2MnAl or Co2FeSi target.