发明授权
- 专利标题: Semiconductor memory device and method of programming the same
- 专利标题(中): 半导体存储器件及其编程方法
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申请号: US12073678申请日: 2008-03-07
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公开(公告)号: US07672154B2公开(公告)日: 2010-03-02
- 发明人: In-jun Hwang , Hyung-soon Shin , Seung-jun Lee , Sun-ae Seo , Kee-won Kim , Kwang-seok Kim
- 申请人: In-jun Hwang , Hyung-soon Shin , Seung-jun Lee , Sun-ae Seo , Kee-won Kim , Kwang-seok Kim
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2007-0113875 20071108
- 主分类号: G11C11/00
- IPC分类号: G11C11/00
摘要:
Provided are a semiconductor memory device and a method of programming the same. The semiconductor memory device includes a mode input value generating unit and a logic operating unit. The mode input value generating unit changes a connection state between input values of a current driving circuit so as to correspond to each of at least two operating modes, and defines a logic function of a magnetic memory cell connected to the current driving circuit in response to each operating mode. The logic operating unit performs a logic operation on the logic functions of at least two magnetic memory cells defined according to each of the operating modes and generates a result of logic operation.