发明授权
US07672166B2 Method of programming in a non-volatile memory device and non-volatile memory device for performing the same
有权
在非易失性存储器件和用于执行该非易失性存储器件的非易失性存储器件中进行编程的方法
- 专利标题： Method of programming in a non-volatile memory device and non-volatile memory device for performing the same
- 专利标题（中）： 在非易失性存储器件和用于执行该非易失性存储器件的非易失性存储器件中进行编程的方法
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申请号： US11955891申请日： 2007-12-13
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公开(公告)号： US07672166B2公开(公告)日： 2010-03-02
- 发明人: Ki-Tae Park , Yeong-Taek Lee , Ki-Nam Kim , Doo-Gon Kim
- 申请人： Ki-Tae Park , Yeong-Taek Lee , Ki-Nam Kim , Doo-Gon Kim
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel Sibley & Sajovec
- 优先权： KR10-2006-0132813 20061222
- 主分类号： G11C16/06
- IPC分类号： G11C16/06
摘要：
Provided are methods for programming in a non-volatile memory device, using incremental step pulses as a program voltage that is applied to a selected wordline. Methods may include applying a precharge voltage to an even bitline and an odd bitline such that the even bitline and the odd bitline are alternately charged with the precharge voltage and a boosted voltage that is higher than the precharge voltage. Methods may further include applying a bitline voltage corresponding to program data to a selected bitline of the even bitline and the odd bitline.