发明授权
- 专利标题： Method of producing high quality relaxed silicon germanium layers
- 专利标题（中）： 生产高品质松散硅锗层的方法
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申请号： US11371442申请日： 2006-03-09
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公开(公告)号： US07674335B2公开(公告)日： 2010-03-09
- 发明人: Eugene A. Fitzgerald , Richard Westhoff , Matthew T. Currie , Christopher J. Vineis , Thomas A. Langdo
- 申请人： Eugene A. Fitzgerald , Richard Westhoff , Matthew T. Currie , Christopher J. Vineis , Thomas A. Langdo
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： C30B21/02
- IPC分类号： C30B21/02
摘要：
A method for minimizing particle generation during deposition of a graded Si1−xGex layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si1−xGex layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm2 on the substrate.
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