发明授权
- 专利标题： Methods of forming threshold voltage implant regions
- 专利标题（中）： 形成阈值电压注入区域的方法
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申请号： US11406893申请日： 2006-04-18
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公开(公告)号： US07674670B2公开(公告)日： 2010-03-09
- 发明人: Hongmei Wang , Kurt D. Beigel , Fred D. Fishburn , Rongsheng Yang
- 申请人： Hongmei Wang , Kurt D. Beigel , Fred D. Fishburn , Rongsheng Yang
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Wells St. John, P.S.
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
The invention includes methods of forming channel region implants for two transistor devices simultaneously, in which a mask is utilized to block a larger percentage of a channel region location of one of the devices relative to the other. The invention also pertains to methods of forming capacitor structures in which a first capacitor electrode is spaced from a semiconductor substrate by a dielectric material, a second capacitor electrode comprises a conductively-doped diffusion region within the semiconductor material, and a capacitor channel region location is beneath the dielectric material and adjacent the conductively-doped diffusion region. An implant mask is formed to cover only a first portion of the capacitor channel region location and to leave a second portion of the capacitor channel region location uncovered. While the implant mask is in place, dopant is implanted into the uncovered second portion of the capacitor channel region location.
公开/授权文献
- US20060199341A1 Methods of forming threshold voltage implant regions 公开/授权日：2006-09-07
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